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Carrington, Peter James
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021ULTRARAM™: a low-energy, high-endurance, compound-semiconductor memory on silicon
- 2019Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Siliconcitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
- 2016Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxycitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
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article
Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
Abstract
GaSb p–i–nphotodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.