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Rzheutski, M. V.
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article
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Abstract
<p>The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO<sub>2</sub> (100) substrates were investigated. Temperature-dependent and time-resolved photoluminescence (PL), X-ray diffraction and Raman scattering measurements were performed to analyze the correlation of the sample properties with the density of I<sub>1</sub>-type basal-plane stacking faults (BSFs). Electron channeling contrast imaging was used to reveal and calculate the density of BSFs reaching the surface of an m-plane GaN/LiAlO<sub>2</sub> layer. It was shown that a local increase of BSF density in the investigated samples results in a rise of the total PL efficiency at low temperatures because of the localization of excitons at BSFs and, therefore, a suppression of their diffusion to nonradiative centers. Parameters of time decay and temperature quenching of the BSF-related PL band were determined. A correlation of both ε<sub>xx</sub> and ε<sub>zz</sub> strain components with the BSFs and crystal mosaicity was observed, and possible reasons of this correlation are discussed.</p>