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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Naresh-Kumar, G.
Cardiff University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2022Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin filmscitations
- 2017Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashescitations
- 2016Reprint of
- 2016Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faultscitations
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2015Digital direct electron imaging of energy-filtered electron backscatter diffraction patternscitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
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article
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Abstract
<p>The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO<sub>2</sub> (100) substrates were investigated. Temperature-dependent and time-resolved photoluminescence (PL), X-ray diffraction and Raman scattering measurements were performed to analyze the correlation of the sample properties with the density of I<sub>1</sub>-type basal-plane stacking faults (BSFs). Electron channeling contrast imaging was used to reveal and calculate the density of BSFs reaching the surface of an m-plane GaN/LiAlO<sub>2</sub> layer. It was shown that a local increase of BSF density in the investigated samples results in a rise of the total PL efficiency at low temperatures because of the localization of excitons at BSFs and, therefore, a suppression of their diffusion to nonradiative centers. Parameters of time decay and temperature quenching of the BSF-related PL band were determined. A correlation of both ε<sub>xx</sub> and ε<sub>zz</sub> strain components with the BSFs and crystal mosaicity was observed, and possible reasons of this correlation are discussed.</p>