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Ohtomo, Akira
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Topics
Publications (18/18 displayed)
- 2017Superconductivity in Ti<sub>4</sub>O<sub>7</sub> and γ-Ti<sub>3</sub>O<sub>5</sub> filmscitations
- 2017Epitaxial structure and electronic property of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on MgO (100) substrates by pulsed-laser depositioncitations
- 2017Highly oriented epitaxial CaFe<sub>2</sub>O<sub>4</sub> thin films on TiO<sub>2</sub> substrates grown by pulsed-laser depositioncitations
- 2016Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe<sub>2</sub>O<sub>3</sub> Thin Filmscitations
- 2016Strain-induced metal-insulator transition in <i>t</i><sub>2g</sub> electron system of perovskite titanate Sm<sub>0.5</sub>Ca<sub>0.5</sub>TiO<sub>3</sub> filmsscitations
- 2015Pulsed-laser deposition of superconducting LiTi<sub>2</sub>O<sub>4</sub> ultrathin films
- 2015Direct growth of metallic TiH<sub>2</sub> thin films by pulsed laser depositioncitations
- 2015Conducting Si-doped γ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by pulsed-laser depositioncitations
- 2014Graphoepitaxy of ZnO: novel selection rule of domain formation on nanopatterned glass surface
- 2013Surface and interface engineering of ZnO based heterostructures fabricated by pulsed-laser depositioncitations
- 2013Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskitescitations
- 2012Epitaxial structures of band-gap-engineered α-(Cr<sub>x</sub>Fe<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> (0 ≤x≤1) films grown on C-plane sapphirecitations
- 2012Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites
- 2011Ferrimagnetism and spontaneous ordering of transition metals in double perovskite La<sub>2</sub>CrFeO<sub>6</sub> filmscitations
- 2011Magnetic properties of Sr<sub>2</sub>FeTaO<sub>6</sub> double perovskite epitaxially grown by pulsed-laser depositioncitations
- 2010Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskitescitations
- 2010Optimization of the Growth Conditions for Molecular Beam Epitaxy of Mg<sub>x</sub>Zn<sub>1-x</sub>O (0≤x≤0.12) Films on Zn-Polar ZnO Substratescitations
- 2010Controlled B-site ordering in Sr<SUB>2</SUB>CrReO<SUB>6</SUB> double perovskite films by using pulsed laser interval depositioncitations
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article
Conducting Si-doped γ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by pulsed-laser deposition
Abstract
We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm−3 and a Hall mobility of 1.6 cm2 V−1 s−1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.