| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renard, Charles
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Epitaxy of hexagonal Ge-2H : lessons from in situ TEM observations
- 2023Epitaxy of hexagonal Ge-2H : growth regimes and related I3 defects
- 2022Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2Hcitations
- 2019In situ electrical characterization of YxTiy getter thin films during thermal activationcitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2017GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgalliumcitations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>citations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO 2citations
- 2008Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor depositioncitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
Places of action
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article
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>
Abstract
High quality micrometer scale GaAs crystals were grown by chemical beam epitaxy from nanoscale Si seeds on a 0.6 nm thick SiO2 layer formed on Si(0 0 1). The use of small diameter openings is expected to lead to a dislocation-free relaxation and to the reduction of the antiphase defects. Thus, the so-formed GaAs crystals are found to be completely relaxed and antiphase boundaries free. The lateral epitaxy without misfit dislocation can evolve on the SiO2 layer that prevents the Si substrate from imposing its lattice parameter on the GaAs crystal. The effect of the growth temperature on the GaAs crystal materials quality was particularly studied by transmission electron microscopy and µ-Raman.