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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Borg, Mattias
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growthcitations
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2019Integration of InSb on Si by Rapid Melt Growth
- 2017High-mobility GaSb nanostructures cointegrated with InAs on Sicitations
- 2017Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxycitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal qualitycitations
Places of action
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article
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
Abstract
We propose a geometric model to estimate the contribution of substrate surface diffusion to growth of dense nanowire arrays using metalorganic vapour phase epitaxy. It is shown that the nanowire mantle area becomes the most significant collector of growth material when the nanowire diameter is large and the inter-nanowire pitch is small. It is concluded that this growth regime is important for the array geometries typically used for optoelectronic and photovoltaic applications of nanowires. The growth rate under these conditions is also not constant with time, due to the growing nanowire mantle area. This result was confirmed by experiments in which dense arrays of InAs nanowires were grown and the nanowire growth rate was measured as a function of time. (C) 2013 Elsevier B.V. All rights reserved.