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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johansson, Jonas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024The need for nonuniform risk acceptability across climate change scenarioscitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2021Surface energy driven miscibility gap suppression during nucleation of III-V ternary alloyscitations
- 2021Sintering Mechanism of Core@Shell Metal@Metal-Oxide Nanoparticlescitations
- 2021Aerotaxycitations
- 2020Pseudo-particle continuum modelling of nanowire growth in aerotaxy
- 2020Limits of III-V Nanowire Growth Based on Droplet Dynamicscitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2017Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regimecitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2016Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowirescitations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2015Size- and shape-dependent phase diagram of In–Sb nano-alloyscitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.citations
- 2011Growth of straight InAs-on-GaAs nanowire heterostructurescitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2009Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowirescitations
- 2008Effects of growth conditions on the crystal structure of gold-seeded GaP nanowirescitations
- 2008Focused ion beam fabrication of novel core-shell nanowire structurescitations
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article
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
Abstract
We propose a geometric model to estimate the contribution of substrate surface diffusion to growth of dense nanowire arrays using metalorganic vapour phase epitaxy. It is shown that the nanowire mantle area becomes the most significant collector of growth material when the nanowire diameter is large and the inter-nanowire pitch is small. It is concluded that this growth regime is important for the array geometries typically used for optoelectronic and photovoltaic applications of nanowires. The growth rate under these conditions is also not constant with time, due to the growing nanowire mantle area. This result was confirmed by experiments in which dense arrays of InAs nanowires were grown and the nanowire growth rate was measured as a function of time. (C) 2013 Elsevier B.V. All rights reserved.