| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Newman, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2017The magnetic, electrical and structural properties of copper-permalloy alloyscitations
- 2016<i>In-situ</i> electron paramagnetic resonance studies of paramagnetic point defects in superconducting microwave resonatorscitations
- 2013Investigations of the disorder in the Ta<i>x</i>N thin films: On the first order Raman spectrum of the rock salt crystal structurecitations
- 2012Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growthcitations
- 2012Thermoelectric properties of Zn5Sb4In2-δ (δ = 0.15)citations
- 2010Low-temperature transport properties of Ta<sub>x</sub>N thin films (0.72 ⩽ x ⩽ 0.83)citations
- 2009Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O-3 (100) thin filmscitations
- 2009Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O-3 (100) thin filmscitations
- 2007Structure-dielectric property relationship for vanadium- and scandium-doped barium strontium titanatecitations
- 2007Structure-dielectric property relationship for vanadium- and scandium-doped barium strontium titanatecitations
- 2006Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applicationscitations
- 2006Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applicationscitations
- 2005High-field superconductivity in alloyed MgB2 thin filmscitations
- 2005Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramicscitations
- 2005Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramicscitations
Places of action
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article
Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth
Abstract
<p>To understand the thermochemistry and determine the rate limiting steps of ZnGeAs2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08 +/- 0.05 eV and an evaporation coefficient of similar to 10(-3). We show that ZnGeAs2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs2 film physical vapor deposition and thermal processing. (C) 2011 Elsevier B.V. All rights reserved.</p>