Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2020InGaN quantum dots studied by correlative microscopy techniques for enhanced light-emitting diodes8citations
  • 2017P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm17citations
  • 2011InN/GaN heterojunction electrical behaviorcitations
  • 2011Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption8citations
  • 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)Ncitations
  • 2002Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 N43citations

Places of action

Chart of shared publication
Grenier, A.
1 / 5 shared
Bellet-Amarlic, E.
1 / 1 shared
Di Russo, E.
1 / 3 shared
Rigutti, L.
1 / 2 shared
Houard, J.
1 / 1 shared
Dimkou, I.
1 / 1 shared
Cooper, D.
1 / 7 shared
Rochat, N.
1 / 10 shared
Dalapati, P.
1 / 1 shared
Jiménez-Rodríguez, M.
1 / 1 shared
Chauvat, M. P.
1 / 6 shared
Valdueza-Felip, S.
1 / 2 shared
Ajay, A.
1 / 1 shared
Cremel, T.
1 / 1 shared
Kheng, Kuntheak
1 / 4 shared
Ruterana, P.
1 / 15 shared
Redaelli, L.
1 / 1 shared
Brazzini, Tommaso
1 / 1 shared
Calle Gómez, Fernando
1 / 6 shared
Albert, Steven
1 / 1 shared
Sánchez García, Miguel Angel
1 / 1 shared
Das, A.
2 / 43 shared
Gacevic, Zarko
1 / 3 shared
Kotsar, Y.
1 / 1 shared
Kandaswamy, P. K.
1 / 2 shared
Bellet-Amalric, Edith
1 / 10 shared
Sarigiannidou, E.
1 / 1 shared
Arroyo-Rojas Dasilva, Yadira
1 / 4 shared
Ruterana, Pierre
1 / 24 shared
Nataf, Gilles
1 / 4 shared
Chauvat, Marie-Pierre
1 / 4 shared
Lahourcade, L.
1 / 3 shared
Ranchal, R.
1 / 12 shared
Montojo, M.
1 / 1 shared
Bougrioua, Zahia
1 / 9 shared
Omnès, Franck
1 / 8 shared
Eickhoff, M.
1 / 2 shared
Palacios, T.
1 / 2 shared
Sanchez, F.
1 / 7 shared
Verdu, M.
1 / 1 shared
Moerman, I.
1 / 4 shared
Calle, F.
1 / 5 shared
Chart of publication period
2020
2017
2011
2010
2002

Co-Authors (by relevance)

  • Grenier, A.
  • Bellet-Amarlic, E.
  • Di Russo, E.
  • Rigutti, L.
  • Houard, J.
  • Dimkou, I.
  • Cooper, D.
  • Rochat, N.
  • Dalapati, P.
  • Jiménez-Rodríguez, M.
  • Chauvat, M. P.
  • Valdueza-Felip, S.
  • Ajay, A.
  • Cremel, T.
  • Kheng, Kuntheak
  • Ruterana, P.
  • Redaelli, L.
  • Brazzini, Tommaso
  • Calle Gómez, Fernando
  • Albert, Steven
  • Sánchez García, Miguel Angel
  • Das, A.
  • Gacevic, Zarko
  • Kotsar, Y.
  • Kandaswamy, P. K.
  • Bellet-Amalric, Edith
  • Sarigiannidou, E.
  • Arroyo-Rojas Dasilva, Yadira
  • Ruterana, Pierre
  • Nataf, Gilles
  • Chauvat, Marie-Pierre
  • Lahourcade, L.
  • Ranchal, R.
  • Montojo, M.
  • Bougrioua, Zahia
  • Omnès, Franck
  • Eickhoff, M.
  • Palacios, T.
  • Sanchez, F.
  • Verdu, M.
  • Moerman, I.
  • Calle, F.
OrganizationsLocationPeople

article

Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption

  • Kotsar, Y.
  • Kandaswamy, P. K.
  • Monroy, E.
  • Bellet-Amalric, Edith
  • Das, A.
  • Sarigiannidou, E.
Abstract

We have studied the strain relaxation in GaN/Al0.1Ga0.9N superlattices grown by plasma-assisted molecular-beam epitaxy on different buffer layers. A periodic relaxation detected in situ was identified as an elastic phenomenon related to the stress induced by the Ga excess adlayer. Plastic relaxation results in an increase of the density of type a dislocations, which is minimum in the case of growth on GaN. There is no evidence of stacking fault formation or crack propagation in any of the samples. (C) 2010 Elsevier B.V. All rights reserved.

Topics
  • density
  • impedance spectroscopy
  • polymer
  • crack
  • dislocation
  • stacking fault