693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Bellet-Amalric, Edith
CEA Grenoble
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substratescitations
- 2023Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substratescitations
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2019Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3(0001)citations
- 2014Boron-doped superlattices and Bragg mirrors in diamondcitations
- 2011Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorptioncitations
- 2007Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columnscitations
- 2006High-Curie-temperature ferromagnetism in self-organized GeMn nanocolumns
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
- 2005X-ray absorption near-edge structure and valence state of Mn in (Ga,Mn)Ncitations
Places of action
| Organizations | Location | People |
|---|
article
Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption
Abstract
We have studied the strain relaxation in GaN/Al0.1Ga0.9N superlattices grown by plasma-assisted molecular-beam epitaxy on different buffer layers. A periodic relaxation detected in situ was identified as an elastic phenomenon related to the stress induced by the Ga excess adlayer. Plastic relaxation results in an increase of the density of type a dislocations, which is minimum in the case of growth on GaN. There is no evidence of stacking fault formation or crack propagation in any of the samples. (C) 2010 Elsevier B.V. All rights reserved.