People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Sürgers, Christoph
Karlsruhe Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2024Lateral Mn$_5$Ge$_3$ spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- 2021Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layerscitations
- 2021Minority-spin conduction in ferromagnetic Mn$_5$Ge$_3$C$_x$ and Mn$_5$Si$_3$C$_x$ films derived from anisotropic magnetoresistance and density functional theory
- 2021Resolving the spin polarization and magnetic domain wall width of (Nd,Dy)$_{2}$Fe$_{14}$B with spin-polarized scanning tunneling microscopycitations
- 2016Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3citations
- 2016Two-band superconductivity of bulk and surface states in Ag thin films on Nbcitations
- 2015Cu-doped nitrides: Promising candidates for a nitride based spin-alignercitations
- 2015Magnetotransport in ferromagnetic Mn₅Ge₃, Mn₅Ge₃C₀̣₈ and Mn₅Si₃C₀̣₈ thin filmscitations
- 2015Search for universality of the density of states of low-energy excitations in amorphous metals
- 2015Growth of Pd4S, PdS and PdS2 films by controlled sulfurization of sputtered Pd on native oxide of Sicitations
- 2015Proximity effect between superconductors and ferromagnetscitations
- 2015Magnetic properties of Cu-doped GaN grown by molecular beam epitaxycitations
- 2014Magnetotransport in ferromagnetic Mn₅Ge₃, Mn₅Ge₃C₀̣₈ and Mn₅Si₃C₀̣₈ thin filmscitations
- 2013Low temperature thermoelectric properties of Cu intercalated TiSe2: a charge density wave materialcitations
- 2013Ferromagnetic Mn 5Ge3C0.8 contacts on Ge: work function and specific contact resistivitycitations
- 2013Growth of Pd4S, PdS and PdS2 films by controlled sulfurization of sputtered Pd on native oxide of Sicitations
- 2013Thermoelectric performance of Cu intercalated layered TiSe2 above 300 Kcitations
- 2012Magnetic properties of Cu-doped GaN grown by molecular beam epitaxycitations
- 2011Cu-doped nitrides: Promising candidates for a nitride based spin-alignercitations
- 2009Poly(3-hexylthiophene) based field-effect transistors with gate SiO2 dielectric modified by multi-layers of 3-aminopropyltrimethoxysilanecitations
- 2008Manganese hyperfine interaction in intermetallic Mn compoundscitations
- 2008Effect of substrate temperature on the microstructure of thin niobium filmscitations
- 2008Growth and characterization of Nb/Gd multilayers for different substrate temperaturescitations
- 2008Heavy-fermion behavior and spin-glass freezing in Si-stabilized amorphous alloys based on UPt3citations
- 2008Electronic transport in magnetically ordered Mn₅Si₃Cₓ filmscitations
- 2007Proximity effect between superconductors and ferromagnetscitations
- 2001Manganese hyperfine interaction in intermetallic Mn compoundscitations
Places of action
Organizations | Location | People |
---|
article
Cu-doped nitrides: Promising candidates for a nitride based spin-aligner
Abstract
A spin-aligner that shows ferromagnetism at room temperature is indispensable for spintronic applications. Diluted magnetic semiconductors are prospective candidates for a spin-aligner. We show that Cu-doped group-III nitrides show ferromagnetic behavior at room temperature although Cu is an intrinsic non-magnetic material. Problems with the building of magnetic secondary phases like in Mn- or Gd-doped nitrides are avoided by using Cu. The formation of Cu-group-III metal compounds is observed. However, these compounds will not affect the ferromagnetic properties and 90% of them can be removed by etching with HNO3 for 5 min.