| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Halbwax, Mathieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 20193D Patterning of Si by Contact Etching With Nanoporous Metalscitations
- 2019A new method of dielectric characterization using a genetic algorithm and a coplanar waveguide on bilayer films
- 2017Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applicationscitations
- 2017Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applicationscitations
- 20173D patterning of silicon by contact etching with anodically biased nanoporous gold electrodescitations
- 2017Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes
- 2016Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias
- 2016Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias
- 2016Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Biascitations
- 2016Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching
- 2016Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching
- 2014Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor depositioncitations
- 2012Antireflective sol-gel TiO2 thin films for single crystal silicon and textured polycrystal siliconcitations
- 2010Measurement of the microwave permittivity of polymer materials for high-speed optical modulator design
- 2010Measurement of the microwave permittivity of polymer materials for high-speed optical modulator design
- 2010Structure optimization of electro-optic polymer waveguides for low half-wave voltage modulatorscitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
- 2004Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes
- 2004Deposition and characterisation of Ge layers epitaxial grown on silicon for the fabrication of waveguide photodetector.
Places of action
| Organizations | Location | People |
|---|
article
Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition
Abstract
International audience ; In this work, the growth of germanium by ultrahigh vacuum chemical vapor deposition on a 0.6nm thick SiO2 layer formed on Si(0 0 1) is investigated by in situ reflection high-energy electron diffraction, high-resolution transmission electron microscopy, scanning electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Because Ge does not grow from germane on SiO2, nucleation sites were created by exposure of the surface to SiH4 at 650 degrees C prior to the Ge deposition, which is initiated at 600 degrees C. The first stage of Ge growth proceeds via the formation of dots that exhibit the same crystalline orientation as the Si substrate. They are assumed to grow from small apertures opened in the silica layer due to the reduction of SiO2 by Si. For further deposition time,1 1\- and1 3\-facetted Ge crystals are formed and the growth remains monocrystalline. The so-formed Ge crystals are found to be completely relaxed and contain some emerging defects, identified as stacking faults. No misfit or threading dislocations are observed. Consequently, the interface between Ge and the SiO2 layer remains perfectly sharp and free of defects. This relaxation without misfit dislocation is due to SiO2 layer which acts as a buffer layer that prevents the Si substrate from imposing its lattice parameter on the Ge crystal. (C) 2007 Elsevier B.V. All rights reserved.