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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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Sopanen, Markku
in Cooperation with on an Cooperation-Score of 37%
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Publications (10/10 displayed)
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2017Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Depositioncitations
- 2010GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursorscitations
- 2009Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2007Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep techniquecitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wellscitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
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article
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Abstract
<p>Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer. © 2007 Elsevier B.V. All rights reserved.</p>