| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sopanen, Markku
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Topics
Publications (10/10 displayed)
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2017Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Depositioncitations
- 2010GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursorscitations
- 2009Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2007Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep techniquecitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wellscitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
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article
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
Abstract
The heteroepitaxial growth of gallium nitride (GaN) on sapphire substrates by metal-organic chemical vapor deposition is most commonly carried out using the two-step growth process. This process involves the deposition of a thin GaN nucleation layer (NL) at a temperature of approximately 450-600 °C. The morphology of this low-temperature film after annealing is known to have a crucial effect on the quality of GaN buffer layers. In this paper, we report on efficient control of the GaN NL morphology using a multistep technique. The technique is used to control the size and reduce the density of nucleation islands (NIs) on the NL in order to optimize the surface morphology for a subsequent higher temperature overgrowth step. Together with process parameter optimization a density as low as 1×107 cm-2 for the NIs is obtained. The NL morphology is analyzed by atomic force microscopy. The dislocation density of GaN buffer layers grown on multistep NLs is evaluated by etch-pit density measurements and X-ray diffraction is used to support and elaborate the results. The crystalline quality of individual NIs is studied by transmission electron microscopy. Measurements indicate that the multistep technique is successfully used to significantly reduce the threading dislocation density in GaN films. A threading dislocation density of 1.0×108 cm-2 is demonstrated with the method.