| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Suihkonen, Sami
VTT Technical Research Centre of Finland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabricationcitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structurecitations
- 2020Metalorganic chemical vapor deposition of aluminum nitride on vertical surfacescitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunctioncitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunction:Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronicscitations
- 2019Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
- 2019P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Sicitations
- 2019Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructurecitations
- 2017MOVPE growth of GaN on 6-inch SOI-substratescitations
- 2016A new system for sodium flux growth of bulk GaN:Part I : System developmentcitations
- 2016Incorporation and effects of impurities in different growth zones within basic ammonothermal GaNcitations
- 2016A new system for sodium flux growth of bulk GaNcitations
- 2016A new system for sodium flux growth of bulk GaNcitations
- 2015Application of UVA-LED based photocatalysis for plywood mill wastewater treatmentcitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.citations
- 2014Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALDcitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaNcitations
- 2009Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
Places of action
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article
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
Abstract
The heteroepitaxial growth of gallium nitride (GaN) on sapphire substrates by metal-organic chemical vapor deposition is most commonly carried out using the two-step growth process. This process involves the deposition of a thin GaN nucleation layer (NL) at a temperature of approximately 450-600 °C. The morphology of this low-temperature film after annealing is known to have a crucial effect on the quality of GaN buffer layers. In this paper, we report on efficient control of the GaN NL morphology using a multistep technique. The technique is used to control the size and reduce the density of nucleation islands (NIs) on the NL in order to optimize the surface morphology for a subsequent higher temperature overgrowth step. Together with process parameter optimization a density as low as 1×107 cm-2 for the NIs is obtained. The NL morphology is analyzed by atomic force microscopy. The dislocation density of GaN buffer layers grown on multistep NLs is evaluated by etch-pit density measurements and X-ray diffraction is used to support and elaborate the results. The crystalline quality of individual NIs is studied by transmission electron microscopy. Measurements indicate that the multistep technique is successfully used to significantly reduce the threading dislocation density in GaN films. A threading dislocation density of 1.0×108 cm-2 is demonstrated with the method.