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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Acik, Ilona Oja
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Publications (5/5 displayed)
- 2024An Alternative Chlorine-Assisted Optimization of CdS/Sb2Se3 Solar Cellscitations
- 2023Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical propertiescitations
- 2019Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistorcitations
- 2019Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windowscitations
- 2016Tin sulfide films by spray pyrolysis technique using L‐cysteine as a novel sulfur sourcecitations
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article
An Alternative Chlorine-Assisted Optimization of CdS/Sb2Se3 Solar Cells
Abstract
The current strategies in the development of Sb2Se3 thin film solar cells involve fabrication and optimization of superstrate and substrate device architectures, with the preferable choice for TiO2 and CdS heterojunction layers. For CdS-based superstrate cells, several studies reported the necessity to apply CdCl2 or other metal halide-based post-deposition treatment (PDT), highlighting improvement of CdS/Sb2Se3 device efficiency. However, the need, effect, and mechanism of such PDT are very often not described. Additionally, the fact that many groups have not succeeded in demonstrating its benefits suggests that this strategy is not straightforward, requiring a deeper understanding towards a more unified concept. The present study proposes an alternative approach to the challenging CdCl2 PDT of CdS in CdS/Sb2Se3 device, involving controllable Cl incorporation in CdS films by systematically varying the concentration of NH4Cl in the CBD precursor solution from 1 to 8 mM. Structural and electrical characterizations are correlated with advanced measurements of Scanning Kelvin Probe, surface photovoltage, and atomic force microscopy to understand the impact of Cl incorporation on the properties of CdS films and CdS/Sb2Se3 devices. The validity of Cl incorporation in the CdS lattice and interdiffusion processes at the CdS-Sb2Se3 interface is confirmed by secondary ion mass spectrometry analysis. It is demonstrated that incorporation of 1 mM of NH4Cl, as a Cl source in CBD CdS, can boost the PCE of CdS/Sb2Se3 by ~20%. With this approach, we offer new perspectives on the optimization methodology for Cl-based CdS/Sb2Se3 device processing and complementary understanding of the physiochemistry behind these processes.