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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Moolayil, Sajmohan Mohandas
University of Oslo
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Publications (3/3 displayed)
- 2024Macro and Nanoscale Properties of (001)-Oriented Bi0. 5Na0. 5TiO3 Lead-Free Piezoelectric Thin Films Grown by Sputtering on LaNiO3/Si Substratescitations
- 2022Utilization of Catechol End-Functionalized PMMA as a Macromolecular Coupling Agent for Ceramic/Fluoropolymer Piezoelectric Compositescitations
- 2022Nanoscale Electrical Investigation of Transparent Conductive Electrodes Based on Silver Nanowire Networkcitations
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article
Macro and Nanoscale Properties of (001)-Oriented Bi0. 5Na0. 5TiO3 Lead-Free Piezoelectric Thin Films Grown by Sputtering on LaNiO3/Si Substrates
Abstract
<p>In this paper, the effect of the post-annealing temperature on the structural and electrical properties at macro and nanoscale of Sodium Bismuth Titanate - Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> (BNT) films is reported. Stoichiometric BNT thin films were deposited by ex-situ radio frequency (rf) sputtering at substrate temperature of 200 °C. The as-deposited films were amorphous and post-annealing treatment was necessary to crystallize the film in the perovskite phase. 400-nm-thick stoichiometric BNT films were annealed at various temperatures from 400 °C up to 700 °C. The BNT film annealed at 400 °C remains amorphous. Film starts to crystallize at 450 °C and then the crystallization increases with the post-annealing temperature to reach an optimal at 650 °C without any secondary phase. Dielectric, ferroelectric and piezoelectric properties were also improved with the increasing of the post-annealing temperature. The piezoelectric coefficient d<sub>33eff</sub>, measured at macroscale, reaches a maximum value of 57 pm/V for 400 nm-thick film post-annealed at 650 °C. On nanoscale, measurements performed by piezoresponse force microscopy are in perfect concordance with the performances obtained at macroscale. The efficient polarization reversal for domains and their retention when locally manipulated are observed, combined to a strong piezo-activity.</p>