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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dong, Hongqun
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Topics
Publications (9/9 displayed)
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2021Wafer Level Solid Liquid Interdiffusion Bondingcitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2018The effect of platinum contact metallization on Cu/Sn bondingcitations
- 2016Effect of Ni content on the diffusion-controlled growth of the product phases in the Cu(Ni)-Sn systemcitations
- 2016Microstructural Evolution and Mechanical Properties in (AuSn)eut-Cu Interconnectionscitations
- 2013Reliability of wafer-level SLID bonds for MEMS encapsulation
- 2011Diffusion and growth of the µ phase (Ni6Nb7) in the Ni-Nb systemcitations
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article
Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bonding
Abstract
Funding Information: This work was supported by the Innovation Funding Agency Business Finland. The work was conducted as part of the ?Silicon microfabrication platform development for next generation products - Beyond SOI? project (1364/31/2019). We acknowledge the provision of facilities and technical support by Aalto University at OtaNano - Nanomicroscopy Center (Aalto- NMC). Publisher Copyright: © 2021 Elsevier B.V. ; Solid-liquid interdiffusion (SLID) bonding is one of the most promising novel methods for micro-(opto)-electromechanical system (MEMS/MOEMS) wafer-level packaging. However, the current SLID bonding solutions require the use of an electrochemical deposition method for MEMS/MOEMS wafers as well, which significantly complicates the process integration options. Hence, this work proposes Co as a potential option for compatible contact metallization on MEMS/MOEMS wafers to utilize mature Cu–Sn SLID bonding. The focus of this study is on gaining a fundamental understanding of the microstructural formation and evolution of Co substrates in contact with Cu–Sn electroplated silicon wafers and identifying possible failures of joints during bonding, which are prerequisites for guaranteeing devices’ manufacturability, functionality, and long-term reliability. The effect of bonding time and temperature on the microstructural evolution and phase formation of Co substrates in contact with Cu–Sn electroplated silicon chips was investigated. Moreover, a phase diagram of the Co–Cu–Sn ternary system was thermodynamically evaluated based on experimental data. Samples were successfully bonded at 250 °C for 1500 and 2000 s and at 280 °C for 1000 s. The main interfacial intermetallic compounds were identified as (Cu,Co)6Sn5, Cu3Sn, and (Co,Cu)Sn3. Co stabilized the high-temperature hexagonal (η) Cu6Sn5 phase down to room temperature. Bond detachment was observed when applying either a higher bonding temperature or a longer bonding time. Two critical factors that cause detachment during bonding were recognized: first, ...