| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cros, Dominique
University of Limoges
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2021Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substratescitations
- 2021Hybridization of additive manufacturing processes to build ceramic/metal parts: Example of HTCCcitations
- 2020Hybridization of additive manufacturing processes to build ceramic/metal parts: Example of LTCCcitations
- 2016BST thin film capacitors integrated within a frequency tunable antenna
- 2014Intercomparison of Permittivity Measurement Techniques for Ferroelectric Thin Layerscitations
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2010High permeability and high permittivity heterostructures for the miniaturization of Radiofrequency components
- 2010A 380-420 MHz Two Pole tunable filter using new ferroelectric composite capacitors
- 2009Filter Synthesis using Shear Wave Piezoelectric Layer Resonators
- 2009Magnetodielectric Thin Film Heterostructure With High Permeability and Permittivity
- 2008Characterization of materials and mode structure of high-Q resonators using Bragg confined modes
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2008Low-loss materials for high -factor Bragg reflector resonatorscitations
- 2007Pulsed laser deposition o aluminum nitride thin films for FBAR applicationscitations
- 2003Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonatorcitations
Places of action
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article
Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates
Abstract
K0.5Na0.5NbO3 thin films were deposited by pulsed laser deposition on (100)MgO substrates for microwave device applications. A fine epitaxial growth of pure perovskite phase was evidenced by X-ray diffraction. Dielectric characterizations were performed from 1 to 40 GHz using coplanar microwave devices printed on the 500 nm-thick K0.5Na0.5NbO3 thin films. Dielectric permittivity εr = 355 and loss tangent tanδ = 0.35 at 10 GHz were retrieved without biasing. A comparison of the results with those retrieved from the resonant cavity method (to characterize as-deposited films) showed no deleterious influence neither from the device patterning nor the thin film-device interface. A frequency tunability up to 22% was measured under a moderate external DC bias electric field Ebias = 94 kV/cm. Temperature measurements from 20° to 240°C exhibited a permittivity increase up to εr = 975 coupled to a loss decrease tanδ = 0.25 at 10 GHz. According to such measurements, an orthorhombic-tetragonal phase transition was evidenced close to 220 °C with an increase of the frequency tunability up to 34%. Comparison of the properties of such films with those grown on R-plane sapphire substrates demonstrated the benefit brought by the epitaxial growth of K0.5Na0.5NbO3 films on (100) MgO.