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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chikoidze, E.
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Publications (6/6 displayed)
- 2020Non-auxetic/auxetic transitions inducing modifications of the magnetic anisotropy in CoFe2O4 thin filmscitations
- 2016Tuning the conductivity type in a room temperature magnetic oxide: Ni-doped Ga0.6Fe1.4O3 thin filmscitations
- 2014Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor depositioncitations
- 2013Direct Evidence of Fe2+-Fe3+ Charge Ordering in the ferrimagnetic Hematite-Ilmenite Fe1.35Ti0.65O3 -d Thin Filmscitations
- 2011Influence of s,p-d and s-p exchange couplings on exciton splitting in Zn1-xMnxOcitations
- 2007ZnO : Mn as a member of II-VI : Mn familycitations
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article
Non-auxetic/auxetic transitions inducing modifications of the magnetic anisotropy in CoFe2O4 thin films
Abstract
International audience ; An auxetic behaviour is evidenced in CoFe2O4 thin films grown by pulsed laser deposition on (100) MgO substrates under various O2/N2 pressures. This rare behaviour for an intrinsic material is observed for intermediate oxidation conditions, in between two non auxetic domains delimited by high (>0.05 mbar) and low (<0.03 mbar) O2/N2 deposition pressures. Combining X-ray resonant diffraction and Mössbauer spectroscopy, we experimentally prove that the auxetic behaviour is related to the presence of cobalt ions in the tetrahedral sites. The impact of the structural modifications caused by the various oxidation conditions on the electronic and magnetic properties are studied for the various oxidation domains. Variations as important as a transition from a p-type semiconducting to an insulating behaviour, or from an in-plane to an out-of-plane magnetization are observed when spanning from the lowest (0.01 mbar) to the highest (1 mbar) studied oxidation pressures. Graphical abstract Schematic representation of both crystallographic and magnetic properties of CoFe2O4 thin films as a function of their deposition pressure