| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vuorinen, Vesa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (48/48 displayed)
- 2024Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliabilitycitations
- 2024Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packagingcitations
- 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration
- 2024Bonding of ceramics to silver-coated titanium—A combined theoretical and experimental study
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2024Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Testcitations
- 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2023Co, In, and Co–In alloyed Cu6Sn5 interconnects: Microstructural and mechanical characteristicscitations
- 2023Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integrationcitations
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stresscitations
- 2022Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packagingcitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding processcitations
- 2022Aluminium corrosion in power semiconductor devicescitations
- 2021Wafer Level Solid Liquid Interdiffusion Bondingcitations
- 2021A humidity-induced novel failure mechanism in power semiconductor diodescitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
- 2019The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formationcitations
- 2018Process Integration and Reliability of Wafer Level SLID Bonding for Poly-Si TSV capped MEMScitations
- 2018The effect of platinum contact metallization on Cu/Sn bondingcitations
- 2018Wafer-Level AuSn/Pt Solid-Liquid Interdiffusion Bondingcitations
- 2017XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connectscitations
- 2017Gigahertz scanning acoustic microscopy analysis of voids in Cu-Sn micro-connectscitations
- 2017Key parameters influencing Cu-Sn interfacial void formation
- 2016Optimization of contact metallizations for reliable wafer level Au[sbnd]Sn bondscitations
- 2016Effect of Ni content on the diffusion-controlled growth of the product phases in the Cu(Ni)-Sn systemcitations
- 2016Void formation and its impact on Cu-Sn intermetallic compound formationcitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Microstructural Evolution and Mechanical Properties in (AuSn)eut-Cu Interconnectionscitations
- 2014Phase evolution in the AuCu/Sn system by solid-state reactive diffusioncitations
- 2014Void formation in Cu-Sn SLID bonding for MEMScitations
- 2011Diffusion and growth of the µ phase (Ni6Nb7) in the Ni-Nb systemcitations
- 2010Study on the growth of Nb3Sn superconductor in Cu(Sn)/Nb diffusion couple
- 2010Impurity and alloying effects on interfacial reaction layers in Pb-free solderingcitations
- 2009Combined thermodynamic-kinetic analysis of the interfacial reactions between Ni metallization and various lead-free solderscitations
- 2009Effect of Ag, Fe, Au and Ni on the growth kinetics of Sn-Cu intermetallic compound layerscitations
- 2009Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structurecitations
- 2009Understanding materials compatibility issues in electronics packaging
- 2008Formation of Intermetallic Compounds Between Liquid Sn and Various CuNix Metallizationscitations
- 2007Evolution of microstructure and failure mechanism of lead-free solder interconnections in power cycling and thermal shock testscitations
- 2007Solid-state reactions between Cu(Ni) alloys and Sncitations
- 2006Phase formation between lead-free Sn-Ag-Cu solder and Ni(P)/Au finishescitations
- 2006Interfacial reactions between Sn-based solders and common metallisations used in electronics
- 2005Analysis of the redeposition of AuSn4 on Ni/Au contact pads when using SnPbAg, SnAg, and SnAgCu solderscitations
- 2005Interfacial reactions between lead-free solders and common base materialscitations
- 2004Analyses of interfacial reactions at different levels of interconnectioncitations
Places of action
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article
Void formation and its impact on Cu-Sn intermetallic compound formation
Abstract
<p>Void formation in the Cu-Sn system has been identified as a major reliability issue with small volume electronic interconnects. Voids form during the interdiffusion of electrochemically deposited Cu and Sn, with varying magnitude and density. Electroplating parameters include the electrolytic chemistry composition and the electroplating current density, all of which appear to effect the voiding characteristics of the Cu-Sn system. In addition, interfacial voiding affects the growth kinetics of the Cu<sub>3</sub>Sn and Cu<sub>6</sub>Sn<sub>5</sub> intermetallic compounds of the Cu-Sn system. The aim here is to present voiding data as a function of electroplating chemistry and current density over a duration (up to 72 h) of isothermal annealing at 423 K (150 °C). Voiding data includes the average interfacial void size and average void density. Voids sizes grew proportionally as a function of thermal annealing time, whereas the void density grew initially very quickly but tended to saturate at a fixed density. A morphological evolution analysis called the physicochemical approach is utilised to understand the processes that occur when a voided Cu/Cu<sub>3</sub>Sn interface causes changes to the IMC phase growth. The method is used to simulate the intermetallic thickness growths' response to interfacial voiding. The Cu/Cu<sub>3</sub>Sn interface acts as a Cu diffusion barrier disrupting the diffusion of Cu. This resulted in a reduction in the Cu<sub>3</sub>Sn thickness and an accelerated growth rate of Cu<sub>6</sub>Sn<sub>5</sub>.</p>