| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Tempez, Agnès
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Correlative microscopy and data analysis for semiconductor technology applications
- 2013Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometrycitations
- 2013Polymer screening by radiofrequency glow discharge time-of-flight mass spectrometrycitations
- 2013Pulsed radiofrequency glow discharge time of flight mass spectrometer for the direct analysis of bulk and thin coated glassescitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2009Pulsed radiofrequency glow discharge time-of-flight mass spectrometry for molecular depth profiling of polymer-based filmscitations
Places of action
| Organizations | Location | People |
|---|
article
Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applications
Abstract
Two-stage fabrication of CuIn1−xAlxSe2 thin films for photovoltaic absorbers using sputtered Cu–In–Al metallic precursors has been investigated. Precursors containing different relative amounts of Al were selenised and their structural and chemical properties characterised. X-ray diffraction (XRD) analyses revealed that the Al was only incorporated into the chalcopyrite structure for precursor composition ratios x = [Al]/([Al] + [In]) ⩾ 0.38, while chemical analysis of the cross-section indicated partial segregation of Al near the back of the film. Precursor films in the range of compositions that yielded no Al incorporation were then selenised at four different temperatures. Glow discharge optical emission spectroscopy, plasma profiling time-of-flight mass spectrometry and XRD analyses provided an insight into the diffusion processes and reactions taking place during the selenisation stage. The effect of post-selenisation annealing without additional Se was also investigated, and led to partial incorporation of the Al into the CuInSe2 lattice but no rediffusion.