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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Forbes, Ian
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Publications (9/9 displayed)
- 2021Diamond-doped silica aerogel for solar geoengineeringcitations
- 2013Study of the Al-grading effect in the crystallisation of chalcopyrite Cu(In,Al)Se2 thin films selenised at different temperaturescitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2010A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite
- 2008New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber materialcitations
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article
Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applications
Abstract
Two-stage fabrication of CuIn1−xAlxSe2 thin films for photovoltaic absorbers using sputtered Cu–In–Al metallic precursors has been investigated. Precursors containing different relative amounts of Al were selenised and their structural and chemical properties characterised. X-ray diffraction (XRD) analyses revealed that the Al was only incorporated into the chalcopyrite structure for precursor composition ratios x = [Al]/([Al] + [In]) ⩾ 0.38, while chemical analysis of the cross-section indicated partial segregation of Al near the back of the film. Precursor films in the range of compositions that yielded no Al incorporation were then selenised at four different temperatures. Glow discharge optical emission spectroscopy, plasma profiling time-of-flight mass spectrometry and XRD analyses provided an insight into the diffusion processes and reactions taking place during the selenisation stage. The effect of post-selenisation annealing without additional Se was also investigated, and led to partial incorporation of the Al into the CuInSe2 lattice but no rediffusion.