| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Van De Kruijs, Robbert
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Structural pathways for ultrafast melting of optically excited thin polycrystalline Palladium filmscitations
- 2024Oxidation of thin film binary entropy alloys
- 2022Relation between composition and fracture strength in off-stoichiometric metal silicide free-standing membranescitations
- 2022Fracture Toughness of Free-Standing ZrSiₓ Thin Films Measured Using Crack-on-a-Chip Methodcitations
- 2021Strengthening ultrathin Si3N4 membranes by compressive surface stresscitations
- 2021Hydrogen etch resistance of aluminium oxide passivated graphitic layerscitations
- 2018Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation thresholdcitations
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2015Determination of oxygen diffusion kinetics during thin film ruthenium oxidationcitations
- 2014Subwavelength single layer absorption resonance antireflection coatingscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
- 2010Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in Mo/B4C/Si layered systemscitations
- 2009In-depth agglomeration of d-metals at Si-on-Mo interfacescitations
- 2009Chemically mediated diffusion of d-metals and B through Si and agglomeration at Si-on-Mo interfacescitations
Places of action
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article
Relation between composition and fracture strength in off-stoichiometric metal silicide free-standing membranes
Abstract
<p>In this work, we investigated the influence of composition on the polycrystalline structure, elastic properties and fracture strength, of Zr<sub>x</sub>Si<sub>1-x</sub>, Nb<sub>x</sub>Si<sub>1-x,</sub> and Mo<sub>x</sub>Si<sub>1-x</sub> free-standing thin films that were deposited by magnetron sputtering and subsequently annealed at 500 °C. Despite deviations from the stoichiometric composition, the crystalline structure of all films, except for the most Zr-rich Zr<sub>x</sub>Si<sub>1-x</sub>, corresponded to their respective stoichiometric disilicide structures, without the formation of a second-phase. Off-stoichiometry was found to be accompanied by the presence of lattice defects and a decrease of the grain size, which bring about a lower tensile stress in the films. The dependence of the fracture strength on the composition was remarkably similar for the three silicides, with the lowest and highest strength values occurring for samples with 30% and 37–40% of metal content, respectively. The observed dependence of strength on composition was attributed to the combination of the Hall-Petch effect, changes in the morphology and strength of grain boundaries, and the enhancement of crystal plasticity due to lattice defects induced by off-stoichiometry.</p>