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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Shao, Li
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article
Electrodeposition of bismuth, tellurium and bismuth telluride through sub-10 nm mesoporous silica thin films
Abstract
Templated electrodeposition is an efficient technique for the bottom-up fabrication of nanostructures and can effectively control the size and shape of the electrodeposits. Here, mesoporous silica thin films with highly ordered mesopores and a regular three-dimensional mesostructure were synthesised as templates for electrodeposition. The mesoporous silica films have small mesopores (∼8 nm) and complex mesopore channels (Fmmm mesostructure with the [0 1 0] axis perpendicular to the substrate). Electrodeposition of bismuth, tellurium and bismuth-tellurium was investigated from electrolytes containing [NnBu4][BiCl4], [NnBu4]2[TeCl6] and [NnBu4]Cl dissolved in dry dichloromethane. Top-view SEM images showed Bi, Te and Bi doped-Te nanoparticles in the mesopores and cross-section SEM showed there were a few Te nanowires, in addition to the particle aggregations on the surface. This is a promising observation as it demonstrates the possibility of preparing sub-10 nm nanowires by templated electrodeposition even though the deposits are not uniformly electrodeposited in all the mesopores. EDX shows the deposited Bi-Te nanoparticles were tellurium-rich, XRD shows they were trigonal tellurium (ICSD 65692). A variety of parameters including the choice of pulsed electrodeposition conditions and [NnBu4][BiCl4] concentration (2.25 mM and 3 mM) were investigated in order to control the composition of the deposit. All samples prepared by pulsed electrodeposition showed very low Bi:Te ratio (Bi/Te<0.02), whereas samples deposited for 5 min at −0.6 V achieved high Bi content (Bi/Te=0.49).