| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bartlett, Philip N.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2024Electrodeposition of bismuth, tellurium and bismuth telluride through sub-10 nm mesoporous silica thin filmscitations
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2023Temperature effects on the electrodeposition of semiconductors from a weakly coordinating solventcitations
- 2022Mesoporous silica films as hard templates for electrodeposition of nanostructured goldcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Diffusion in weakly coordinating solventscitations
- 2022Selection and characterisation of weakly coordinating solvents for semiconductor electrodepositioncitations
- 20222D material based optoelectronics by electroplating
- 20222D material based optoelectronics by electroplating
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Chloroantimonate electrochemistry in dichloromethanecitations
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2019Electrodeposition of bismuth telluride from a weakly coordinating, non-aqueous solutioncitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Active gas replenishment and sensing of the wetting state in a submerged superhydrophobic surfacecitations
- 2017Plastic reactor suitable for high pressure and supercritical fluid electrochemistrycitations
- 2017Tin, bismuth, and tin–bismuth alloy electrodeposition from chlorometalate salts in deep eutectic solventscitations
- 2016Haloplumbate salts as reagents for the non-aqueous electrodeposition of leadcitations
- 2016A versatile precursor system for supercritical fluid electrodeposition of main-group materialscitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015A Versatile Precursor System for Supercritical Fluid Electrodeposition of Main-Group Materialscitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013A his-tagged Melanocarpus albomyces laccase and its electrochemistry upon immobilisation on NTA-modified electrodes and in conducting polymer filmscitations
- 2013The deposition of mesoporous Ni/Co alloy using cetyltrimethylammonium bromide as the surfactant in the lyotropic liquid crystalline phase bathcitations
- 2010Position-dependent coupling between a channel waveguide and a distorted microsphere resonatorcitations
- 2010Synthesis and structure of [{C7F15CO2}2AgAu(PPh3)]2 and its use in electrodeposition of gold–silver alloyscitations
- 2009Relating SERS intensity to specific plasmon modes on sphere segment void surfacescitations
- 2009Electrodeposition of metals from supercritical fluidscitations
- 2009Electrodeposition of highly ordered macroporous iridium oxide through self-assembled colloidal templatescitations
- 2007Geometrical multilayers: coercivity in magnetic 3-D nanostructurescitations
- 2007SERS at structured palladium and platinum surfacescitations
- 2006Orientation and symmetry control of inverse sphere magnetic nanoarrays by guided self-assemblycitations
- 2005Shape-induced anisotropy in antidot arrays from self-assembled templatescitations
Places of action
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article
Diffusion in weakly coordinating solvents
Abstract
Weakly coordinating solvents are of interest for the electrodeposition of p-block semiconductors for application in electronic devices. p-block complexes typically have weakly coordinated ligands that are easily displaced, making them incompatible with strongly Lewis basic solvents. In this work we use electrochemical measurements at microelectrodes to study diffusion in weakly coordinating solvents. Diffusion coefficients of the metallocenes decamethylferrocene, decamethylferrocenium hexafluorophosphate, cobaltocenium hexafluorophosphate, and the electrodeposition precursors tetrachloroantimonate(III) and tetrachlorobismuthate(III) were measured. The values are analyzed using the modified Stokes-Einstein equation and compared with the theoretical upper, D max , and lower, D min , bounds of the diffusion coefficients. This approach allows the interpretation of D values, whilst avoiding dealing with some of the uncertainties associated with molecular size in the Stokes-Einstein equation. The neutral decamethylferrocene was found to obey the Stokes-Einstein equation whereas the charged metallocene species had values which were less than the theoretical minimum, which was attributed to a larger than expected particle size caused by ion pairing. The importance of considering the modifications of the Stokes-Einstein equation is also highlighted.