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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Laitinen, Mikko
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Topics
Publications (16/16 displayed)
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Thermomechanical properties of aluminum oxide thin films made by atomic layer depositioncitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2018Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface Chemistrycitations
- 2017Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO<sub>2</sub>citations
- 2017Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivationcitations
- 2016Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Filmscitations
- 2015Atomic layer deposited lithium aluminum oxidecitations
- 2014Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness and adhesioncitations
- 2013Atomic layer deposition of LixTiyOz thin filmscitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmascitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmascitations
- 2011Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide filmscitations
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article
Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films
Abstract
Amorphous carbon (a-C) films with varying oxygen content were deposited by closed-field unbalanced magnetron sputtering with the aim to understand the effect of oxygen on the structural and physical properties of the films and subsequently correlate these changes with electrochemical properties. The a-C films were characterized by transmission electron microscopy, helium-ion microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and time-of-flight elastic recoil detection analysis. The electrochemical properties were studied by electrochemical impedance spectroscopy and cyclic voltammetry with several redox systems (Ru(NH3)62+/3+, Fe(CN)64−/3−, dopamine and ascorbic acid). The results indicated that the carbon films are amorphous with an ID/IG ratio near 2.6. The oxygen content of the films seemed to saturate at around 11 at. %, whereas the amount of surface oxygen functional groups increased steadily with increasing oxygen inflow during deposition. O/C ratio increased from 0.09 to 0.19. A significant increase in film resistivity was observed with increasing oxygen content. Lightly oxygenated a-C films showed a low charge transfer resistance (Rct) and reversible electron transfer for Ru(NH3)62+/3+ whereas both Rct and ΔEp increased considerably for heavily oxygenated films. The inner sphere redox systems were significantly affected by the surface oxygen functional groups with dopamine and ascorbic acid showing a linear increase in ΔEp and Epa, respectively, with increasing oxygen content. Fe(CN)64−/3− did not show a clear trend but was still clearly affected by the increase in oxygen content. The double layer capacitance was about 1 μF/cm2 for all the oxygenated a-C films. ; peerReviewed