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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Weeber, Arthur
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma
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article
Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cells
Abstract
<p>Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have explored these passivating structures on IBC solar cells and obtained over 22% efficiency with over 23% within reach on the short term. We present in detail the passivation quality of p-type and n-type ion-implanted LPCVD poly-crystalline silicon (poly-Si) and its relation to the doping profile. Optimized poly-Si layers in the role of emitter and BSF showed excellent passivation (J<sub>0,emitter</sub> = 11.5 fA/cm<sup>2</sup> and J<sub>0,BSF</sub> = 4.5 fA/cm<sup>2</sup>) and have been deployed in FSF-based IBC c-Si solar cells using a simple self-aligned patterning process. Applying an optimized passivation of FSF by PECVD a-Si:H/SiNx layer (J<sub>0,FSF</sub> = 6.5 fA/cm<sup>2</sup>) leads to a cell with efficiency of 22.1% (V<sub>OC</sub> = 709 mV, J<sub>SC</sub> = 40.7 mA/cm<sup>2</sup>, FF = 76.6%). Since over 83% FF has been reached with adjusted metallization technology on similar IBC structures, we believe 23% efficiency is within reach on the short term. Further improvement, especially at J<sub>SC</sub> level, is expected by deploying less absorbing carrier-selective passivating contacts based on poly-Si or wide bandgap poly-SiO<sub>x</sub> layers (J<sub>0</sub> ~ 10 fA/cm<sup>2</sup>).</p>