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Lasalvia, Vincenzo
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article
Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides
Abstract
We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO<sup>2</sup> and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,<sub>contact</sub>, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,<sub>contact</sub>) and the specific contact resistivity (ρ<sub>contact</sub>) using a TLM pattern. The best ITO/SiO<sup>2</sup> passivated contact in this study has J<sub>0,contact</sub> = 92.5 fA/cm<sup>2</sup> and ρ<sub>contact</sub> = 11.5 mOhm-cm<sup>2</sup>. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,<sub>contact</sub>, ρ<sub>contact</sub>) values. The ITO/SiO<sub>2</sub> contacts are found to have a higher J0,<sub>contact</sub>, but a similar ρ<sub>contact</sub> compared to the best reported passivated contacts.