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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Teodoro, Orlando
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Amorphous carbon thin filmscitations
- 2023The Role of Hydrogen Incorporation into Amorphous Carbon Films in the Change of the Secondary Electron Yieldcitations
- 2020Free-standing N-Graphene as conductive matrix for Ni(OH)2 based supercapacitive electrodescitations
- 2019Nanocomposite thin films based on Au-Ag nanoparticles embedded in a CuO matrix for localized surface plasmon resonance sensingcitations
- 2018Development of Au/CuO nanoplasmonic thin films for sensing applicationscitations
- 2016Surface modifications on as-grown boron doped CVD diamond films induced by the B2O3-ethanol-Ar systemcitations
- 2014Ion-plasma treatment of reed switch contactscitations
- 2013Amorphous Carbon Coatings: Temperature Effect on Secondary Electron Yield (SEY)
- 2013Study of SEY degradation of amorphous carbon coatings
- 2013Increase of secondary electron yield of amorphous carbon coatings under high vacuum conditionscitations
- 2012An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium depositioncitations
- 2012TOF-SIMS study of cystine and cholesterol stonescitations
- 2009Characterisation of DLC Films Deposited Using Titanium Isopropoxide (TIPOT) at Different Flow Ratescitations
- 2006Characterisation of metal/mould interface on investment casting of γ-TiAlcitations
- 2005Evaluation of y2O3 as front layer of ceramic crucibles for vaccum induction melting of TiAl based alloys
- 2002Anomalous growth of Ba on Ag(111)citations
Places of action
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article
Surface modifications on as-grown boron doped CVD diamond films induced by the B2O3-ethanol-Ar system
Abstract
<p>The surface termination of as-grown microcrystalline (MCD) and nanocrystalline (NCD) boron-doped diamond films was assessed by X-ray photoelectron spectroscopy (XPS) and water contact angle techniques. The diamond coatings were grown on mirror-polished silicon nitride ceramic substrates using the hot-filament chemical vapor deposition (HFCVD) technique. The boron doping source, boron oxide (B<sub>2</sub>O<sub>3</sub>) diluted in ethanol, was dragged by a constant Ar flow at different CH<sub>4</sub>/H<sub>2</sub> gas ratios and system pressures. The electrical resistivity of these semiconducting diamond films was obtained and their surfaces were further characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The results have shown that the increasing total pressure particularly affects the crystal size of the boron doped MCD samples by enhancing diamond renucleation due to the higher residence time of Ar. Also, both as-grown MCD and NCD surface types were found to be inherently hydrophobic, with contact angles ~ 90 °C, but retain significant amounts of oxygen bonded to carbon atoms mainly as C-O-C and C = O terminations. Such partial diamond surface oxidation is the result of a very unique stable gas mixture containing hydrogen, carbon and oxygen, when boron oxide and ethanol are added to methane during the CVD process.</p>