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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Greer, A. I. M.
in Cooperation with on an Cooperation-Score of 37%
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Publications (3/3 displayed)
- 2012Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps
- 2012Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stampscitations
- 2012Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamondcitations
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article
Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond
Abstract
This paper demonstrates that the pattern feature size achieved for electron beam lithography (EBL) on diamond substrates can be minimised through optimisation of the thickness of a surface deposited metallic discharge layer. The purpose and benefits of a charge dissipation layer are presented and the subsequent trade-off with feature size examined. 5 nm of Al is demonstrated to be the optimum thickness of charge dissipation layer for polymethyl methacrylate (PMMA) resist on polycrystalline diamond as the feature size retains a similar variance to thicker layers, has good reproducibility and ultimately produces the smallest feature sizes. PMMA can be used as either a metal deposition mask, or an etch mask for SiO<sub>2</sub> which in turn can be used as an etch mask for diamond. Using this process we have demonstrated pattern transfer and metallisation of features onto diamond and SiO<sub>2</sub> coated diamond down to a dimension of 20 nm.