| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Isoird, Karine
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2021Ohmic contacts by phosphorous ion implantation on (111) N-type CVD Diamond
- 2012"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
- 2012An assessment of contact metallization for high power and high temperature diamond Schottky devicescitations
- 2009A New Junction Termination Using a Deep Trench Filled With BenzoCycloButenecitations
- 2003Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
- 2002A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effectscitations
- 2001Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Places of action
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article
An assessment of contact metallization for high power and high temperature diamond Schottky devices
Abstract
International audience ; Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current-voltage (I-V) characteristics, the series resistance and the thermal stability are discussed in the range of RT to 625 K for all Schottky devices. High current densities close to 3.2 kA/cm2 are displayed and as the series resistance decreases with increasing temperature, proving the potential of diamond for high power and high temperature devices. The thermal stability of metal/diamond interface investigated with regards to the Schottky barrier height (SBH) and ideality factor n fluctuations indicated that Ni and W are thermally stable in the range of RT to 625 K. Current-voltage measurements at reverse bias indicated a maximum breakdown voltage of 70 V corresponding to an electric field of 3.75 MV/cm. Finally, these electrical measurements have been completed with mechanical adhesion tests of contact metallizations on diamond by nano-scratching technique. These studies clearly reveal Ni as a promising contact metallization for high power, high temperature and good mechanical strength diamond Schottky barrier diode applications.