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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jacob, M. V.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Microwave Characterisation of MgTe2O5 using quasi TE0np Mode Dielectric Resonator Technique
- 2008Bi-2(Zn2/3-x/3Nb4/3-2x/3Tix)O-7 Ceramics - A High Permittivity Microwave Dielectrics for Electronics Application
- 2007Non-destructive complex permittivity measurement of low permittivity thin film materialscitations
- 2006Cryogenic complex anisotropic permittivity of magnesium fluoridecitations
- 2006Dielectric characterisation of Barium Fluoride at cryogenic temperatures using TE011 and quasi TE0mn mode dielectric resonatorscitations
- 2005Low temperature complex permittivity of MgF/sub 2/ at microwave frequencies from TE/sub 01/spl delta// modescitations
- 2004Recent advances in measurements of permittivity and dielectric losses at microwave frequenciescitations
- 2004Microwave characterization of (La,Sr)(AlTa)O3 using TE011 mode dielectric resonator
- 2003Lithium tantalate - a high permittivity dielectric material for microwave communication systemscitations
- 2003Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator techniquecitations
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article
Dielectric characterisation of Barium Fluoride at cryogenic temperatures using TE011 and quasi TE0mn mode dielectric resonators
Abstract
Barium Fluoride (BaF<sub>2</sub>), mainly used in optical applications, has similar properties to those of CaF<sub>2</sub> but better stability under environmental conditions. In this paper, we report measurements of loss tangent and the real part of the relative permittivity ε<sub>r</sub> of single crystal BaF<sub>2</sub> in the temperature range from 14 to 290 K at frequencies of 8, 10.4, 12.1, 17.6, 21.1 and 24.4 GHz. Microwave properties of BaF<sub>2</sub> were determined by measurements of the resonance frequency and the unloaded Q-factor of TE<sub>011</sub> and quasi TE<sub>0mn</sub> modes cylindrical cavities containing the sample under test. Two techniques namely Hakki-Coleman Dielectric Resonator and dielectric post resonators have been used for characterizing the dielectric material. Losses due to the uncalibrated cables and adaptors inside the cryocooler are accounted in the calculation of unloaded Q-factor using the Transmission Mode Q-Factor data processing technique. The permittivity of BaF<sub>2</sub> exhibited a 5% increase from 6.9 (14 K) to 7.35 (290 K). The loss tangent increased from 1 × 10<sup>-5</sup> to 1.1 × 10<sup>-4</sup> over the measured temperature range, 14-290 K at a frequency of 10.4 GHz. The measured microwave properties show that BaF<sub>2</sub> can be used in many microwave devices. © 2006 Elsevier Ltd. All rights reserved.