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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Cymerman, Konrad
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Publications (6/6 displayed)
- 2024A comparative study of oxidation behavior of Co4Sb12 and Co4Sb10.8Se0.6Te0.6 skutterudite thermoelectric materials fabricated via fast SHS-PPS routecitations
- 2023Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering routecitations
- 2023Microstructure and Mechanical Characterization of Novel Al2O3–(NiAl–Al2O3) Composites Fabricated via Pulse Plasma Sinteringcitations
- 2021Characterization of Al2O3 Samples and NiAl–Al2O3 Composite Consolidated by Pulse Plasma Sinteringcitations
- 2020Effect of the sintering temperature on microstructure and properties of Al2O3–Cu–Ni hybrid composites obtained by PPScitations
- 2018Structure and mechanical properties of TiB 2 /TiC – Ni composites fabricated by pulse plasma sintering methodcitations
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article
Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering route
Abstract
Selenium is an effective dopant in skutterudite-based thermoelectric materials. It strongly influences thermaltransport properties due to effective phonon scattering. This study proposes a short-term fabrication route to SemodifiedCoSb3-based materials. Alloy synthesis was conducted via self-propagating high-temperature synthesis.Subsequently, pulse plasma sintering consolidated all materials. As a result, thermoelectric materials with highelectrical properties homogeneity were obtained. Seebeck potential mapping showed the measured deviation ofthe Seebeck coefficient for all fabricated samples was between 5 and 7%. A very low thermal conductivity (1.59W mက00 1 Kက00 1, at 573 K) was achieved for the highest doped sample, and one of the lowest reported results obtainedfor bulk skutterudite-based thermoelectric materials ever. This resulted in a low lattice thermal conductivity(1.51 W mက00 1 Kက00 1, at 573 K). This led to the highest ZT (0.27 at 623 K) for the highest doped sample.