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Motta, Antonella |
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article
Study of Pb-based and Pb-free perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport material
Abstract
<p>SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni<sub>1-x</sub>O thin films as hole transport layer. The Cu-doped Ni<sub>1-x</sub>O film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni<sub>1-x</sub>O films were used as input parameters in the simulation of Pb-based (MAPbI<sub>3-x</sub>Cl<sub>x</sub>) and Pb-free (MAGeI<sub>3</sub>) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni<sub>1-x</sub>O film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell.</p>