| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iqbal, Muzammil
Maastricht University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Lead free A2NaInI6 (A = Cs, Rb, K) double perovskites for optoelectronic and thermoelectric applicationscitations
- 2024Investigating the impact of plasma nitriding on Ti6Al4V surface, structural, and mechanical properties and their simultaneous evaluation via laser opto-ultrasonic dual detection (LOUD) approachcitations
- 2021Visible-light driven photo-catalytic performance of novel composite of TiO2 and fluorinated hexagonal boron nitride nanosheetscitations
- 2020Cheap, reliable, reusable, thermally and chemically stable fluorinated hexagonal boron nitride nanosheets coated Au nanoparticles substrate for surface enhanced Raman spectroscopycitations
- 2020Experimental and theoretical evidence of P-type conduction in fluorinated hexagonal boron nitride nano-sheetscitations
Places of action
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article
Experimental and theoretical evidence of P-type conduction in fluorinated hexagonal boron nitride nano-sheets
Abstract
<p>The structural and electronic transport properties of Fluorine-doped boron nitride nanosheets (F-BNNSs) were investigated in a back-gate assisted field-effect transistor (FET) to exhibit the recognition of excellent p-type conduction because of Fluorine-doping. It was observed that the drain current was modulated by gating and increased significantly with the applied negative gate voltage, suggesting the predomination of holes. Moreover, theoretical calculations predicts, the formation of acceptor states at the fermi-level, supporting experimental results that fluorinated h-BN acts as a P-type semiconductor. Parameter together, with the ON/OFF ratio, resistivity and holes concentration, was additionally retrieved from the I<sub>ds</sub>-V<sub>ds</sub> curves. Our results suggest that such type of novel device description is a valuable approach to disclose the particular properties of fluorine functionalized BNNSs.</p>