| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Foo, Kai Loong
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Novel synthesis of silicon carbide nanotubes by microwave heating of blended silicon dioxide and multi-walled carbon nanotubes: The effect of the heating temperature
Abstract
ilicon carbide nanomaterials, especially silicon carbide nanotubes (SiCNTs), are known as excellent materials for high-power and high-temperature harsh environment electronics applications because of the unique properties of SiCNTs, such as a high thermal stability, good chemical inertness and excellent electronic properties. In this article, we presented a novel synthesis of SiCNTs by microwave heating a blend of silicon dioxide (SiO 2 ) and multi-walled carbon nanotubes (MWCNTs) at a ratio of 1:3 at temperatures of 1350 °C, 1400 °C and 1450 °C. The effects of different heating temperatures on the synthesis of SiCNTs were studied. X-ray diffraction revealed the presence of single phase β-SiC for syntheses conducted at 1400 °C and 1450 °C. Meanwhile, field-emission scanning electron microscopy images showed that no residual silicon dioxide or MWCNTs was observed with syntheses conducted at 1400 °C and 1450 °C. High-magnification transmission electron microscopy revealed that the tubular structure of the MWCNTs was preserved and that SiCNTs had a lattice fringe spacing of 0.261 nm corresponding to the (111) plane of β-SiC. Photoluminescence spectroscopy showed the presence of a β-SiC peak at a wavelength of 465 nm, and the band gap energy of SiCNTs was 2.67 eV. Fourier transform infrared spectroscopy analysis revealed that the absorption band of the Si–C bond was detected at 803 cm −1 . The purity of SiCNTs synthesized at 1400 °C and 1450 °C is high, as indicated by the low weight loss in thermo-gravimetric analysis.