| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morrison, Finlay D.
University of St Andrews
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2022Structural, magnetic, and electrical properties of Bi1-xLaxMnO3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2022Magnetically driven dielectric and structural behavior in Bi0.5La0.5FeO3citations
- 2020Stable 6H organic-inorganic hybrid lead perovskite and competitive formation of 6H and 3C perovskite structure with mixed A cationscitations
- 2019Stable 6H organic-inorganic hybrid lead perovskite and competitive formation of 6H and 3C perovskite structure with mixed A cationscitations
- 2018Quantum critical points in ferroelectric relaxors : stuffed tungsten bronze K3Li2Ta5O15 and lead pyrochlore (Pb2Nb2O7)citations
- 2018Quantum critical points in ferroelectric relaxors: Stuffed tungsten bronze K3Li2Ta5O15 and lead pyrochlore ( Pb2Nb2O7 )citations
- 2018Quantum critical points in ferroelectric relaxors:stuffed tungsten bronze K 3 Li 2 Ta 5 O 15 and lead pyrochlore (Pb 2 Nb 2 O 7 )citations
- 2017Microstructural and high-temperature impedance spectroscopy study of Ba6MNb9O30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Microstructural and high-temperature impedance spectroscopy study of Ba 6 MNb 9 O 30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Microstructural and high-temperature impedance spectroscopy study of Ba6MNb9O30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Manipulation of polar order in the “empty” tetragonal tungsten bronzes: Ba4-xSrxDy0.671.33Nb10O30, x = 0, 0.25, 0.5, 1, 2, 3citations
- 2016Manipulation of polar order in the “empty” tetragonal tungsten bronzes: Ba 4-x Sr x Dy 0.67 1.33 Nb 10 O 30 , x = 0, 0.25, 0.5, 1, 2, 3citations
- 2016Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structure : Ba6MNb9O30 (M = Ga, Sc, In)citations
- 2015Effect of local A-site strain on dipole stability in A 6 GaNb 9 O 30 (A = Ba, Sr, Ca) tetragonal tungsten bronze relaxor dielectricscitations
- 2015Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structure:Ba 6 MNb 9 O 30 (M = Ga, Sc, In)citations
- 2015Effect of local A-site strain on dipole stability in A6GaNb9O30 (A = Ba, Sr, Ca) tetragonal tungsten bronze relaxor dielectricscitations
- 2015Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structurecitations
- 2012Structural, magnetic, and electrical properties of Bi 1-x La x MnO 3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2012Magnetically driven dielectric and structural behavior in Bi 0.5 La 0.5 FeO 3citations
- 2012Structural, magnetic, and electrical properties of Bi1-xLaxMnO3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2012Structural, magnetic and electrical properties of the hexagonal ferrites MFeO3 (M=Y, Yb, In)citations
- 2012Magnetically driven dielectric and structural behavior in Bi0.5La0.5FeO3citations
- 2009Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb 2 O 7citations
- 2009Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7citations
- 2009Impedance spectroscopy studies on polycrystalline BiFeO3 thin films on Pt/Si substratescitations
- 2008Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheetscitations
- 2008Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMscitations
- 2007Toward Self-Assembled Ferroelectric Random Access Memories:Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Investigating the effects of reduced size on the properties of ferroelectricscitations
- 2005Exploring the fundamental effects of miniaturisation on ferroelectrics by focused ion beam processing of single crystal materialcitations
- 2005High-field conduction in barium titanatecitations
- 2005Recent materials characterizations of [2D] and [3D] thin film ferroelectric structurescitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Novel high capacitance materials: BaTiO3 : La and CaCu3Ti4O12citations
- 2003Ferroelectric nanotubes
- 2003New developments in ferroelectric thin filmscitations
- 2002CaCu3Ti4O12: One-step internal barrier layer capacitorcitations
- 2001Characterization of lanthanum-doped barium titanate ceramics using impedance spectroscopy
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article
Microstructural and high-temperature impedance spectroscopy study of Ba6MNb9O30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structure
Abstract
This work reports on the microstructural and high-temperature impedance spectroscopy study of a family of dielectric ceramics Ba<sub>6</sub>MNb<sub>9</sub>O<sub>30</sub> (M=Ga, Sc, In) of tetragonal tungsten bronze (TTB) structure with relaxor properties. For Ba<sub>6</sub>GaNb<sub>9</sub>O<sub>30</sub> and Ba<sub>6</sub>InNb<sub>9</sub>O<sub>30</sub> pellets, the SEM images have revealed good, dense internal microstructures, with well-bonded grains and only discrete porosity; in contrast Ba<sub>6</sub>ScNb<sub>9</sub>O<sub>30</sub> pellets had a poorer microstructure, with many small and poorly-bonded grains gathered in agglomerates, resulting in significant continuous porosity and poorly defined grain boundary regions. The electroactive regions were characterised by the bulk and grain boundaries capacitances and resistances, while their contribution to the electrical conduction process was estimated by determining activation energies from the temperature (Arrhenius) dependence of both electric conductivities and time constants. For Ga and In analogues the electronic conductivity are dominated by the bulk response, while for Sc analogue, the poorly defined grain boundaries give a bulk-like response, mixing with the main bulk contribution.