| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fabbri, Filippo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursorscitations
- 2022In-vivo, in-situ, light-tunable manipulation of cells' biomechanics on a photoactive azobenzene bio-substrate
- 2022Optically tunable metal-dielectric diffractive structurescitations
- 20223D arrangement of epitaxial graphene conformally grown on porousified crystalline SiCcitations
- 2020Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.
- 2020Transforming colloidal Cs4PbBr6 nanocrystals with poly(maleic anhydride-alt-1-octadecene) into stable CsPbBr3 perovskite emitters through intermediate heterostructurescitations
- 2020Effect of Chemical Vapor Deposition WS2 on Viability and Differentiation of SH-SY5Y Cellscitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2016Controlling the Surface Energetics and Kinetics of Hematite Photoanodes Through Few Atomic Layers of NiO xcitations
- 2009Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires
- 2009βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL
Places of action
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article
3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC
Abstract
Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a three-dimensional porous structure, circumventing the limits of its 2D nature, constitutes therefore a breakthrough for many fields. We report the first three-dimensional growth of epitaxial graphene on a porousified crystalline 4H–SiC(0001). The wafer porosification is performed via a sequence of metal-assisted photochemical and photoelectrochemical etching in hydrofluoric acid based electrolytes. Pore dimensions of the matrix have been evaluated by electron tomography resulting in an average diameter of 180 nm. Graphene growth is performed in an ultra high vacuum environment at a base pressure of 10−11 mbar. The graphene growth inside the pores is uniform as confirmed by Transmission Electron Microscopy (TEM) analysis. Raman spectroscopy confirms the high quality of the graphene with a 2D/G intensity ratio and an average graphene crystal size of ≈ 100 nm. Furthermore, it demonstrates a uniform coverage of graphene across the whole sample area accessible to the Raman probe. The surface-to-volume ratio of this novel material, its properties, the tunability of the pore size and the scalability of the surface porosification process offer a game changing perspective for a large number of applications.