| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berbezier, Isabelle
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2021Implementation of Nanoscale Secondary‐Ion Mass Spectrometry Analyses: Application to Ni‐Based Superalloyscitations
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2019High graphene permeability for room temperature silicon deposition: The role of defectscitations
- 2017Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensationcitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopycitations
- 2017Contacting of Si/SiO2 core/shell nanowires using laser photolithography
- 2016Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometrycitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewettingcitations
- 2015Kinetics and Energetics of Ge Condensation in SiGe Oxidationcitations
- 2014Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxycitations
- 2013Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beamcitations
- 2013Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin filmscitations
- 2012Design of free patterns of nanocrystals with ad hoc features via templated dewettingcitations
- 2012The kinetics of dewetting ultra-thin Si layers from silicon dioxidecitations
- 2011In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beamcitations
- 2011Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seedscitations
- 2011Mn5Ge3 films grown on Ge(1 1 1)-c(2 × 8)citations
- 2010Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structurescitations
- 2007Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductorscitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2002Sb-surfactant mediated growth of Ge nanostructures
Places of action
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article
High graphene permeability for room temperature silicon deposition: The role of defects
Abstract
Graphene (Gr) is known to be an excellent barrier preventing atoms and molecules to diffuse through it. This is due to the carbon atom arrangement in a two-dimensional (2D) honeycomb structure with a very small lattice parameter thus forming an electron cloud that prevents atoms and molecules crossing. Nonetheless at high an-nealing temperatures, intercalation of atoms through graphene occurs, opening the path for formation of vertical heterojunctions constituted of two-dimensional layers. In this paper, we report on the ability of silicon atoms to penetrate the graphene network, fully epitaxially grown on a Ni(111) surface, even at room temperature. Our scanning tunneling microscopy (STM) experiments show that the presence of defects like vacancies and disloca-tions in the graphene lattice favor the Si atoms intercalation, thus forming two-dimensional, flat and disordered islands below the Gr layer. Ab-initio molecular dynamics calculations confirm that Gr defects are necessary for Si intercalation at room temperature and show that: i) a hypothetical intercalated silicene layer cannot be stable for more than 8 ps and ii) the corresponding Si atoms completely lose their in-plane order resulting in a random planar distribution and form strong covalent bonds with Ni atoms.