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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bae, Hyeonhu
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Publications (3/3 displayed)
- 2020Efficient Sensing Properties of Aluminium Nitride Nano Sheets Towards Toxic Pollutants Under Gated Electric Fieldcitations
- 2019Enhancement in hydrogen storage capacities of light metal functionalized Boron–Graphdiyne nanosheetscitations
- 2019Reversible hydrogen storage properties of defect-engineered C4N nanosheets under ambient conditionscitations
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article
Reversible hydrogen storage properties of defect-engineered C4N nanosheets under ambient conditions
Abstract
<p>Inspired by the promise of hydrogen (H<sub>2</sub>) as a clean alternate to the existing energy sources, we have employed spin-polarized density functional theory calculations on a recently designed two-dimensional C<sub>4</sub>N monolayer as a promising H<sub>2</sub> storage material. By means of first principles DFT calculations, we have comprehensively studied the geometric and electronic properties of pristine, defected and metal-doped C<sub>4</sub>N nanosheets and further explored their H<sub>2</sub> storage properties. We found that light metal dopants such as Li, Na, K, Mg, and Ca bind strongly to defects on a C<sub>4</sub>N nanosheet with binding energies of 3–4 eV per dopant. These binding energies are sufficiently strong to surpass metal clustering. Thermal stability of the metal-doped C<sub>4</sub>N nanosheets has been further verified by means of ab initio molecular dynamics simulations. The bonding nature of the metal dopants with the C<sub>4</sub>N nanosheet has been studied through Bader analysis and Roby-Gould methods and the electronic properties were studied through density of states. We found that each dopant in the metal-doped C<sub>4</sub>N nanosheet can bind up to five H<sub>2</sub> molecules with adsorption energies ranging between 0.15 and 0.60 eV/H<sub>2</sub>, which results in optimal H<sub>2</sub> storage capacities. Finally, we employed thermodynamic analysis to investigate the H<sub>2</sub> adsorption/desorption mechanism under practical operating conditions.</p>