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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renoud, Raphaël
Nantes Université
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin filmscitations
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2020Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin filmscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Description of domain wall motions by the hyperbolic law
- 2016Decomposition of the different contributions to permittivity, losses, and tunability in BaSrTiO3 thin films using the hyperbolic lawcitations
- 2015Effect of Manganese Doping of BaSrTiO 3 on Diffusion and Domain Wall Pinningcitations
- 2015Temperature stable BaSrTiO3 thin films suitable for microwave applicationscitations
- 2014Dielectric long time relaxation of domains walls in PbZrTiO3 thin filmscitations
- 2014Electrophoretic deposition of BaTiO3 thin films from stable colloidal aqueous solutionscitations
- 2011The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
- 2011Ferroelectric thin films for mobile communication applications
- 2011Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O-3 Ferroelectric Thin Filmscitations
- 2011Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
- 2011Description of the low field nonlinear dielectric properties of ferroelectric and multiferroic materialscitations
- 2010Measurement and modelisation of dielectric properties of ferroelectrics thin layers
- 2010Description of the nonlinear dielectric properties of ferroelectrics under a weak AC-fieldcitations
- 20071-D modelisation of a BaTiO3 single crystal
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article
Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin films
Abstract
Domains of antiferroelectric PbZrO3 have been studied. The (111) PbZrO3 has lower field transitions due to the reduction of the angle between the ferroelectric polar axis and the applied electric field. The study of the permittivity reveals also that the (111) PbZrO3 has a higher correlation of dipoles (|Shf| = 0.007) due to the energy gain associated with their orientation. Therefore, the (111) crystallographic orientation is a better choice for obtaining easily switching domain. The dielectric response of the domain walls in the (100) and (111) PbZrO3 are identical because they have the same environment (same grain size and similar defects) and interact in the same way. Only the domain wall density is higher in the (111) PbZrO3 due to its lower crystallographic orientation factor. Different crystallographic directions have more obstacles due to the inhomogeneity of the crystallization and consequently has more nucleation site for domain walls.