| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vopson, Melvin Marian
University of Portsmouth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Diamagnetic coupling for magnetic tuning in nano-thin filmscitations
- 2019Sub-lattice polarization states in anti-ferroelectrics and their relaxation processcitations
- 2019Evidence of substrate roughness surface induced magnetic anisotropy in Ni80Fe20 flexible thin filmscitations
- 20171D core-shell magnetoelectric nanocomposites by template-assisted liquid phase depositioncitations
- 2012Probing the local strain-mediated magnetoelectric coupling in multiferroic nanocomposites by magnetic field-assisted piezoresponse force microscopycitations
- 2012Nanostructured p-n junctions for kinetic-to-electrical energy conversioncitations
- 2005Preparation of high moment CoFe films with controlled grain size and coercivitycitations
- 2005Deposition of polycrystalline thin films with controlled grain sizecitations
- 2005Grain size effects in metallic thin films prepared using a new sputtering technology
- 2004Novel sputtering technology for grain-size controlcitations
Places of action
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article
Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
Abstract
We report studies of quasi-remanent polarization states in Pb0.99Nb0.02 [(Zr0.57Sn0.43) 0.94Ti0.06] 0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique insitu electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn Mössbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of 2kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated "read-out" protocols, possibly involving dc electrical biasing.