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Venkatachalam, D. K.
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Publications (5/5 displayed)
- 2014Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectricscitations
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
- 2012Resistive switching in high-k dielectrics for non-volatile memory applications
- 2010Bistable resistive switching in hafnium-silicate thin films
- 2010Size controlled growth of silica nanowires by thermal decomposition of thin gold films on siliconcitations
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article
Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics
Abstract
<p>The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO<sub>2</sub> and Hf<sub>0.6</sub>Si <sub>0.4</sub>O<sub>2</sub> films are reported. The reliability of HfO <sub>2</sub> devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf<sub>0.6</sub>Si<sub>0.4</sub>O<sub>2</sub> devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO<sub>2</sub> in ReRAM applications.</p>