693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vähänissi, Ville
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Status report on emerging photovoltaicscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Rapid thermal anneal activates light induced degradation due to copper redistributioncitations
- 2017Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Getteringcitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2017Full recovery of red zone in p-type high-performance multicrystalline siliconcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2014Iron Precipitation upon Gettering in Phosphorus-Implanted Czochralski Silicon and its Impact on Solar Cell Performancecitations
- 2013Passivation of black silicon boron emitters with atomic layer deposited aluminum oxidecitations
- 2008Metallization of Polymer Substrates for Flexible Electronics
Places of action
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article
Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide
Abstract
Aluminium oxide (Al2O3) thin films grown at low temperatures using atomic layer deposition (ALD) are known to often suffer from local delamination sites, referred to as “blisters”, after post-deposition annealing during device processing. In this work, we report our observation that doping of the silicon substrate has an effect on blister formation. The introduction of a highly doped layer by diffusion or implantation is found to significantly reduce blistering, compared to the non-doped regions in the immediate vicinity. Similar behavior is observed for both phosphorus and boron doping. Further investigation of this phenomenon using substrates with different resistivities reveals that even when introduced already during silicon crystal growth, doping affects the blistering of aluminium oxide films. Changes in several properties of silicon affected by doping, most importantly surface terminating groups, native oxide growth, and passivation of defects with hydrogen, are discussed as potential reasons behind the observed effect on blistering. ; Peer reviewed