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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ott, Jennifer
Helsinki Institute of Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Multispectral photon-counting for medical imaging and beam characterization - A project reviewcitations
- 2022Multispectral photon-counting for medical imaging and beam characterization — A project reviewcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2022Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2021Application of atomic layer deposited thin films to silicon detectors ; Atomikerroskasvatuksella tuotettujen ohutkalvojen soveltaminen puolijohdeilmaisimiincitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2021Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detectioncitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxidecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
- 2019Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2017Advanced processing of CdTe pixel radiation detectorscitations
- 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectorscitations
Places of action
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article
Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide
Abstract
Aluminium oxide (Al2O3) thin films grown at low temperatures using atomic layer deposition (ALD) are known to often suffer from local delamination sites, referred to as “blisters”, after post-deposition annealing during device processing. In this work, we report our observation that doping of the silicon substrate has an effect on blister formation. The introduction of a highly doped layer by diffusion or implantation is found to significantly reduce blistering, compared to the non-doped regions in the immediate vicinity. Similar behavior is observed for both phosphorus and boron doping. Further investigation of this phenomenon using substrates with different resistivities reveals that even when introduced already during silicon crystal growth, doping affects the blistering of aluminium oxide films. Changes in several properties of silicon affected by doping, most importantly surface terminating groups, native oxide growth, and passivation of defects with hydrogen, are discussed as potential reasons behind the observed effect on blistering. ; Peer reviewed