| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuball, Martin H. H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2022Self-assembled microstructures with localized graphene domains in an epoxy blend and their related propertiescitations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets.citations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheetscitations
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2019Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modificationcitations
- 2018Determination of the self-compensation ratio of carbon in AlGaN for HEMTscitations
- 2017Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETscitations
- 2015Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interfacecitations
- 2015Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 Vcitations
- 2014Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistorscitations
- 2009Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layerscitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
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article
Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN
Abstract
<p>This work compares Cl<sub>2</sub>-based inductively-coupled plasma (ICP) etching of N-polar and III-polar Al<sub>x</sub>Ga<sub>1-x</sub>N, including GaN and AlN. For the etch processes of this study, etch rates of Al<sub>x</sub>Ga<sub>1-x</sub>N decreased with increasing Al:Ga alloy ratio. A 750 W ICP power, 175 W platen power Cl<sub>2</sub>/Ar ICP process exhibited etch rates in the range 160–450 nm/min for Al<sub>x</sub>Ga<sub>1-x</sub>N with the precise rate depending on alloy composition and material polarity, and etch rate selectivity between AlN and GaN of 3.0 for III-polar material and 1.6 for N-polar material. Cl<sub>2</sub>/Ar/O<sub>2</sub> processes with 650 W ICP power and 50 W platen power showed an overall reduction in etch rate in the range 2–360 nm/min for Al<sub>x</sub>Ga<sub>1-x</sub>N with precise rate depending on alloy composition and material polarity. These O<sub>2</sub> containing chemistries demonstrated significantly greater etch rate selectivity for N-polar materials (8–80) compared to III-polar materials (1.8–1.9). A correlation between GaN etch rate, surface roughening and selectivity was observed, and the possible reasons behind the polarity dependence of etch rate selectivity are discussed.</p>