| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mielcarek, Sławomir
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2019Scanning tunneling microscopy study of Cu-induced surface restructuring of Si(100)-(2 × 1)
- 2015Room temperature magnetism of few-nanometers-thick Fe<inf>3</inf>O<inf>4</inf>(111) films on Pt(111) and Ru(0001) studied in ambient conditionscitations
- 2013Martensitic phase transition in Cu-14%Al-4%Ni shape memory alloys studied by Brillouin light scatteringcitations
- 2012The effect of nickel nanostructure on surface waves propagation in silicon supportcitations
- 2011Surface acoustic waves and elastic constants of Cu14%Al4%Ni shape memory alloys studied by Brillouin light scatteringcitations
- 2010Elastic properties of Cu-Al-Ni shape memory alloys studied by dynamic mechanical analysiscitations
- 2008STM study of titanium silicide nanostructure growth on Si(1 1 1)-(sqrt(19) × sqrt(19)) substratecitations
- 2006Low-temperature elastic and dielectric properties of K <inf>3</inf>Na(SO<inf>4</inf>)<inf>2</inf> crystalscitations
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article
Scanning tunneling microscopy study of Cu-induced surface restructuring of Si(100)-(2 × 1)
Abstract
<p>We used scanning tunneling microscopy (STM) to study the Cu-induced restructuring of Si(100)-(2 × 1) surface at the atomic scale. Copper was deposited onto silicon substrates kept at room temperature (RT) or 500 °C. Submonolayer amounts of Cu were found to be sufficient to induce a visible restructuring of the Si(100)-(2 × 1) surface manifested by the disappearance of the vacancy line defects (VLDs), as well as dimer rows disordering (for the RT deposition) or the formation of a c(4 × 4) surface reconstruction (for the 500 °C deposition) not reported for the Cu/Si(100) system so far. Higher amounts of Cu deposited onto the RT-disordered surface at 500 °C led to the formation of 3D CuSi crystallites, accompanied by a significant surface roughening. In contrast, deposition of large amounts of Cu onto a pristine Si(100) at 500 °C resulted in the formation of a near-(1 × 1) local surface atoms ordering.</p>