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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Król, Krystian Bogumił
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Topics
Publications (6/6 displayed)
- 2020Surface sintering of tungsten powder targets designed by electromagnetic discharge: A novel approach for film synthesis in magnetron sputteringcitations
- 2018Relation between modulation frequency of electric power oscillation during pulse magnetron sputtering deposition of MoNx thin filmscitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2018Structure and electrical resistivity dependence of molybdenum thin films deposited by dc modulated pulsed magnetron sputteringcitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
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article
Relation between modulation frequency of electric power oscillation during pulse magnetron sputtering deposition of MoNx thin films
Abstract
This work reports the results of a study, concerning the synthesis of molybdenum nitride thin films, by DC Pulsed Magnetron Sputtering method (PMS), operating with 100 kHz main frequency, and modulated by the additional frequency, adjustable in the range of 10–1000 Hz (modulated Pulse Magnetron Sputtering – mPMS). We have studied the influence of mPMS on the state of plasma using optical emission spectroscopy technique (OES). X-ray photoelectron spectroscopic analysis (XPS) and X-ray diffractometry (XRD) were also used to investigate the relationship between phase composition and modulation frequency of Mo-N thin films. These investigations have revealed a presence of low-temperature phases of β-Mo16N7 and δ-MoN, confirming correlation between chemical state of Mo 3d3/2, 3d5/2 or 3p3/2 and amount of nitrogen incorporation in Mo-N structures. Films’ morphology was well examined by scanning electron microscopy (SEM) and consists the nanocrystalline/amorphous domains. From the utilitarian point of view, very good thermal stability, promising mechanical properties being: H ∼ 16 GPa, E∗ ∼ 180 GPa (NanoTest) and low value of resistivity below 650 μΩcm (4-point probe method) of the Mo-N, predestine them as an effective diffusion barrier in Cu-wired MOSFET structures. Results confirmed that additional modulation frequency should be considered as a significant factor of electric power oscillation during reactive synthesis by means of PMS-based method.