People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Moret, Matthieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barrierscitations
- 2022Determination of the direct bandgap value in In4Se3 thin filmscitations
- 2017Study of $Cu_{2}O{backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer depositioncitations
- 2015Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transportcitations
- 2014Atomic Layer Deposition of zinc oxide for solar cell applicationscitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2003High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.
Places of action
Organizations | Location | People |
---|
article
Study of $Cu_{2}O{backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer deposition
Abstract
$Cu_{2}OZnO$ nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the$Cu_{2}OZnO$nanostructures have been investigated. The properties of the $Cu_{2}O$ absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of$Cu_{2}O$ film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on $Cu_{2}OZnO$ nanomaterials and improve their overall performance.